Include Product Page SiO2

LINEAR FORMULA:
SiO2
PURITY: >99.99%
CRYSTAL ORIENTATION:  (100), (110) & (111)
GROWTH METHOD: Hydrothermal method
CRYSTAL STRUCTURE: Hexagonal
LATTICE CONSTANT: a= 4.914 Å
MELTING POINT  (°C): 1610
THERMAL EXPANSION COEFFICIENT (/K): perpendicular to Z axis: 13.71

parallel to Z axis: 7.48
HARDNESS: 7
MOLAR MASS (G/MOL):
60.08
DENSITY (G/CM3): 2.684 g/cm3
REFRACTIVE INDEX: 1.544
DIELECTRIC CONSTANTS:
3.7 - 3.9
CHEMICAL STABILITY: 
SIZES: 5x5mm, 10x10 mm, 20x20 mm, 1 inch diameter, 2 inch diameter, 60 mm diameter 3 inch MgO wafers and 4 inch 
TYPICAL THICKNESS: 0.5mm
SIZE TOLERANCES:  +/- 0.1mm
THICKNESS TOLERANCES:  +/- 0.015mm
ORIENTATION PRECISION: +/-0.5 degree
POLISHING OPTIONS: SINGLE SIDED (1SP) OR BOTH SIDES POLISHED (2SP)
ROUGHNESS RA: <0.5nm

 

 

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